Radiation Effects in MOS Oxides

10.1109/TNS.2004.839202

10.1109/TNS.1987.4337449

10.1109/23.211427

10.1016/B978-0-08-023049-8.50079-8

10.1063/1.106807

10.1063/1.341494

10.1063/1.326344

10.1109/23.124085

10.1109/TNS.1987.4337496

10.1109/TNS.1986.4334575

10.1109/TNS.1984.4333529

winokur, 1989, Ionizing Radiation Effects in MOS Devices and Circuits, 193

10.1109/23.25433

manzini, 1983, Insulating Films on Semiconductors, 112

10.1109/TNS.1984.4333525

10.1002/pssb.2221740106

10.1109/TNS.1977.4329200

10.1109/23.45373

10.1016/j.sse.2005.12.017

ballard, 1989, Instabilities in Silicon Devices, 2

10.1109/TNS.2004.839256

10.1063/1.346580

10.1109/23.819120

10.1109/23.983179

10.1109/TNS.2005.860667

lucovsky, 2006, differences between charge trapping states in irradiated nano-crystalline and non-crystalline hf silicates, IEEE Trans Nucl Sci, 53, 3644, 10.1109/TNS.2006.886211

10.1109/TNS.2004.839204

10.1016/j.microrel.2003.12.005

10.1109/TNS.2002.805392

10.1109/TNS.1987.4337445

10.1063/1.99828

10.1109/TNS.1984.4333491

10.1109/TNS.2006.885375

mclean, 1987, Basic mechanisms of radiation effects in electronic materials and devices

mclean, 1989, Ionizing Radiation Effects in MOS Devices and Circuits, 87

kittel, 1968, Introduction to Solid State Physics

10.1109/23.124092

10.1063/1.322767

10.1109/23.903821

10.1103/PhysRevB.15.1052

10.1109/23.340513

10.1109/TNS.2005.860709

10.1109/23.124115

10.1109/23.736457

10.1109/23.658948

10.1109/23.7506

10.1109/23.124150

10.1109/23.25487

10.1109/TNS.1986.4334603

10.1109/23.736492

10.1109/23.510741

10.1109/23.340540

10.1109/TNS.1987.4337463

10.1109/16.55760

10.1109/23.45419

10.1109/23.659060

10.1109/16.7364

10.1109/23.340556

10.1109/23.211425

10.1109/23.736501

10.1109/23.489236

10.1109/IEDM.1996.554107

10.1109/TNS.1982.4336384

10.1109/TNS.1985.4334047

10.1109/23.983150

10.1109/23.856481

10.1109/23.983149

kurosawa, 1981, a new bird's-beak free field isolation technology for vlsi devices, 1981 International Electron Devices Meeting, 384, 10.1109/IEDM.1981.190094

10.1109/23.736491

10.1109/IEDM.1994.383292

10.1063/1.1448859

10.1109/IEDM.1999.824190

10.1049/el:20020119

10.1109/TNS.2002.805389

10.1063/1.1361065

felix, 0, power mosfet degradation in space radiation environments, IEEE Trans Nucl Sci

10.1109/55.830975

10.1109/16.954476

lee, 1999, ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric applications, IEDM Tech Dig, 133

10.1109/16.19935

10.1016/0167-9317(93)90132-O

10.1109/EDL.1986.26514

10.1109/16.108221

10.1109/16.57169

10.1103/PhysRevLett.30.1333

10.1109/16.108220

10.1063/1.88200

10.1109/23.983189

10.1109/TNS.2005.860699

10.1109/TNS.2007.892262

10.1109/23.856487

10.1109/TNS.2007.909708

10.1109/23.556848

10.1109/TNS.2007.907870

10.1109/23.736486

10.1109/23.25486

10.1109/23.903751

10.1109/23.819158

10.1109/23.819159

10.1109/23.903752

0, Radiation-Hardening of SOI by ion implantation into the buried oxide

10.1109/TNS.2005.861079

10.1016/j.microrel.2006.06.009

10.1109/TNS.1986.4334586

10.1109/23.281534

10.1109/TNS.2006.884351

ferlet-cavrois, 2008, FinFETs and Other Multi-Gate Transistors

10.1109/23.212320

10.1109/23.101171

10.1109/TNS.1980.4331090

10.1109/TNS.1981.4335689

10.1109/TNS.1981.4335690

10.1109/TNS.1987.4337511

10.1109/TNS.1974.6498909

10.1109/TNS.2004.839258

10.1109/23.25487

10.1109/IEDM.1995.499310

10.1016/S0026-2714(02)00019-7

10.1109/TNS.1986.4334579

10.1109/IEDM.1988.32759

10.1109/23.101177

10.1109/23.101218

10.1109/TNS.2003.820771

mclean, 1976, ?A direct tunneling model of charge transfer at the insulator-semiconductor interface in MIS devices ?

10.1109/23.211409

10.1109/23.685218

10.1109/TNS.2006.884787

10.1063/1.332937

iizuka, 1981, double threshold mosfets in bird's-beak free structures, 1981 International Electron Devices Meeting, 380, 10.1109/IEDM.1981.190093

10.1109/23.903805

10.1109/TNS.2006.877981

10.1109/23.903750

10.1109/TNS.2003.813137

10.1109/TNS.1984.4333551

10.1109/TNS.1985.4334089

10.1109/23.101219

10.1109/23.124078

10.1109/23.124099

10.1109/23.211407