Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons

IEEE Transactions on Nuclear Science - Tập 53 Số 5 - Trang 2977-2982 - 2006
F. Nava1,2, A. Castaldini1,2, A. Cavallini1,2, Paolo Errani1,2, V. Cindro3
1Dipartimento di Fisica, Università di Modena e Reggio Emila, Modena, Italy
2I.N.F.N., Bologna, Italy
3Jozef Stefan Institute, Ljubljana, Slovenia

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