Quasi-static/cyclic loading tests of nanometric SiO/sub 2/ wires using AFM technique for NEMS designs
Proceedings of the 2nd IEEE Conference on Nanotechnology - Trang 51-54
Tóm tắt
This research carried out intermediate temperature quasi-static/cyclic loading tests of nanometric silicon dioxide wires (SiO/sub 2/ nano-wires) using AFM, for revealing specimen size and temperature effects on mechanical properties and fatigue lives of the wires. Four kinds of the SiO/sub 2/ nano-wires with widths from 230 nm to 800 nm were prepared by a thermal oxidation of nanometric single crystal silicon wires (SCS nano-wires). Quasi-static bending tests using AFM examined Young's modulus, fracture stress and strain of the wires at temperatures ranging from 295 K to 573 K in high vacuum. All of the SiO/sub 2/ nano-wires fractured in a brittle manner at the test temperatures. Young's moduli of the nano-wires agreed with that of bulk silica, which showed that the modulus had no specimen size effect. However, fracture stress and strain of the SiO/sub 2/ nano-wires changed with not only temperature but also specimen size. Cyclic bending tests in AFM using the 230 nm- and 410 nm-wide SiO/sub 2/ wires investigated high cycle fatigue lives of the wires at room temperature. The number of cycles to failure of the 230 nm-wide wires was slightly larger than that of the 410 nm-wide wires at the loading frequency of 50 Hz and 450 Hz. This is suggestive of existing of the specimen size effect on the fatigue lives of the SiO/sub 2/ nano-wires.
Từ khóa
#Testing #Wires #Fatigue #Silicon compounds #Capacitive sensors #Mechanical factors #Oxidation #Thermal stresses #Temperature distribution #FrequencyTài liệu tham khảo
tsuchiya, 2000, Tensile testing of insulating thin films; humidity effect on tensile strength of SiO2 films, Sensors and Actuators A, 82, 286, 10.1016/S0924-4247(99)00363-5
10.1109/TEI.1970.299088
10.1109/84.993447
10.1109/84.896765