Quantum transport modeling in nano-scale devices
Tóm tắt
We present results and describe progress we have made in the development of our quantum transport modeling for nanoscale devices. Our simulation is based upon either the nonequilibrium Green's function method (NEGF) or the quantum correction (QC) associated with the density gradient method (DG) and/or the effective potential method (EP). We show the results of our modeling methods applied to several devices and discuss issues faced with regards to computational time, open boundary conditions, and their relationship to self-consistent solution of the Poisson-NEGF equations. We also discuss those for efficiently tailored QC Monte Carlo techniques.
Từ khóa
#Nanoscale devices #Quantum mechanics #Integrated circuit modeling #Atomic layer deposition #MOSFETs #Tunneling #Analytical models #Electrons #Green's function methods #DiodesTài liệu tham khảo
10.1103/PhysRevB.24.4445
heine, 1960, Proc Phys Soc, 81
tsuchiya, 2001, IEICE Trans Electron E82-C, 880
haug, 1996, Quantum Kinetics in Transport and Optics of Semiconductors
ferry, 2000, Superlattices Microstruct, IEDM2000, 28, 419
10.1007/978-1-4757-5714-9
feynman, 1965, Quantum Mechanics and Path Integrals
lake, 1997, J Appl Phys, 81, 10.1063/1.365394
10.1017/CBO9780511805776
vogl, 1983, J Phys Chem Solids, 44, 10.1016/0022-3697(83)90064-1
ogawa, 2000, Solid St Electron, 42
2001, International Technology Roadmap for Semiconductors