Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs
Proceedings of the 2nd IEEE Conference on Nanotechnology - Trang 197-200
Tóm tắt
We have investigated the threshold voltage dispersion in deep submicron mosfets with three dimensional statistical simulations. We show that the doping fluctuations in the vertical directions account almost for the whole dispersion of the threshold voltage. Therefore, we have been able to reproduce the results with a one-dimensional simulator in which also quantum confinement in the channel is taken into account.
Từ khóa
#Semiconductor process modeling #Threshold voltage #MOSFETs #Fluctuations #Doping profiles #Potential well #Poisson equations #Charge carrier density #Silicon #Standards developmentTài liệu tham khảo
10.1109/16.777162
10.1109/16.735728
10.1109/IWCE.1998.742760
10.1109/16.830997
10.1006/spmi.1999.0806
taur, 1998, Fundamentals of Modern VISI Devices
10.1109/16.711362
wong, 1993, Three-dimensional ‘atomistic’ simulation of discrete random dopant distribution effects in sub-0.1µm MOSFETs, IEDM Tech Dig, 705