Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials

IEEE Transactions on Nuclear Science - Tập 51 Số 6 - Trang 3743-3747 - 2004
Jonathan P. Comeau1, Akil K. Sutton1, B.M. Haugerud1, John D. Cressler1, Wei-Min Lance Kuo1, Paul W. Marshall2, Robert A. Reed2, A. Kar-Roy3, Roger Van Art3
1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
2NASA''s Goddard Space Flight Center, Greenbelt, MD, USA
3Jazz Semiconductor, Newport Beach, CA, USA

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IEEE Transactions on Nuclear Science

Tập 51 Số 6

3743-3747

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