Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers
Tóm tắt
For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4H-SiC epitaxial layers are carried out by the X-ray and optical methods before and after irradiation with 15-MeV protons with fluences in the range of (1–4) × 1012 cm–2. When increasing the fluence of proton irradiation, the formation of localized regions with negative deformation is observed along with the unperturbed silicon-carbide matrix. Agreement between the X-ray and optical studies is obtained, which makes it possible to explain the features of the spectral changes in the photosensitivity of detectors in the range of 200–400 nm with an increase in the fluence of proton irradiation. The ultraviolet Cr/4H-SiC photodetectors withstand irradiation by 15-MeV protons with a fluence of 4 × 1012 cm–2 virtually without any changes in the photosensitivity due to the gettering of simple defects by cluster and amorphous formations, which lead to partial structural improvement of the irradiated material.
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