Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

Journal of Applied Physics - Tập 107 Số 5 - 2010
Junpei Kasai1, Taro Hitosugi1,2, Miki Moriyama3, Koichi Goshonoo3, Ngoc Lam Huong Hoang4, Satoshi Nakao1, Naoomi Yamada1, Tetsuya Hasegawa1,4
1Kanagawa Academy of Science and Technology (KAST) 1 , Kawasaki 213-0012, Japan
2Tohoku University 2 Advanced Institute for Materials Research (WPI-AIMR), , Sendai 980-8577, Japan
3Toyoda Gosei Co., Ltd. 3 , Nishikasugai, Aichi 452-8564, Japan
4The University of Tokyo 4 Department of Chemistry, , Tokyo 113-0033, Japan

Tóm tắt

Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8×10−4 Ω cm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO2 was well matched to that of GaN. These findings indicate that Nb-doped TiO2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

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Tài liệu tham khảo

1997, The Blue Laser Diode

2005, Science, 308, 1274, 10.1126/science.1108712

2009, Nat. Photonics, 3, 180, 10.1038/nphoton.2009.32

2005, Appl. Phys. Lett., 86, 252101, 10.1063/1.1949728

2005, Jpn. J. Appl. Phys., Part 2, 44, L1063, 10.1143/JJAP.44.L1063

2008, Appl. Phys. Express, 1, 115001, 10.1143/APEX.1.115001

2008, Jpn. J. Appl. Phys., 47, 6706, 10.1143/JJAP.47.6706

2005, J. Vac. Sci. Technol. B, 23, 499, 10.1116/1.1868672

2005, Jpn. J. Appl. Phys., Part 2, 44, L1503, 10.1143/JJAP.44.L1503

2007, Appl. Phys. Lett., 90, 212106, 10.1063/1.2742310

2008, Jpn. J. Appl. Phys., 47, 7537, 10.1143/JJAP.47.7537

2005, Acta Mater., 53, 323, 10.1016/j.actamat.2004.09.026

2006, Appl. Phys. Lett., 88, 226103, 10.1063/1.2208448

2007, J. Appl. Phys., 102, 013701, 10.1063/1.2750407

2008, Appl. Phys. Express, 1, 111203, 10.1143/APEX.1.111203

1993, Electron. Lett., 29, 1759, 10.1049/el:19931172

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Journal of Applied Physics

Tập 107 Số 5

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