Khảo sát hiệu suất của các tế bào mặt trời p-GaAsP/i-GaAs/n-GaAsP qua các biến đổi về thành phần và hình học

Álvarez D, Thomas T, Führer M, Hylton N, Daukes N, Lackner D, Philipps S, Bett A, Sodabanlu H, Fujii H, Watanabe K, Sugiyama M, Nasi L, Campanini M (2014) InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells. Appl Phys Lett 105:083124 Chaujar R, Pandey R (2016) Novel back-contact back junction SiGe (BC-BJ SiGe) solar cell for improved power conversion efficiency. Microsyst Technol 22:2673–2680 Fan S, Yu Z, Sun Y, Weigand W, Dhingra P, Kim M, Hool R, Ratta E, Holman Z, Lee M (2019) 20%-efficient epitaxial GaAsP/Si tandem solar cells. Sol Energy Mater Sol Cells 202:110144 Kim H, Kim K, Guan Y, Lee J, Kuech T, Mawst L (2018) Single junction solar cell employing strain compensated GaAs0.965Bi0.035/ GaAs0.75P0.25multiple quantum wells grown by metal organic vapor phase epitaxy. Appl Phys Lett 112:251105 KoTamraju S, Sukeerthi M, Puthanveettil S (2019) Modeling of InGaP/InGaAs-GaAsP/Ge multiple quantum well solar cell to improve efficiency for space applications. Sol Energy 186:328–334 Lepkowski D, Grassman T, Boyer J, Chmielewski D, Yi C, Juhl M, Soeriyadi A, Western N, Mehrvarz H, Romer U, Baillie A, Kerestes C, Derkacs D, Whipple S, Stavrides A, Bremner S, Ringel S (2021) 23.4% monolithic epitaxial GaAsP/Si tandem solar cells and qualification of losses from threading dislocations. Solar Energy Mater Solar Cells 230:111299 Li B, Xiang XB, You ZP, Xu Y, Fei XY, Liao XB (1996) High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect. Sol Energy Mater Sol Cells. https://doi.org/10.1016/0927-0248(96)00025-6,Vol.44;pp.63-67 Martín D, Tabarés E, Rey-Stolle I (2016) Assessment of rear-surface processing strategies for III–V on Si multi-junction solar cells based on numerical simulations. IEEE Trans Electron Devices 63:252–258 Nath P, Biswas A (2021) Radiation-resilient GaN/InxGa1-xN multi-junction solar cells with varying In contents, in the 3th International Conference ICCDC 2021; Lecture Notes in Electrical Engineering book series. 851: 155–167. https://doi.org/10.1007/978-981-16-9154-6_16 Nath P, Biswas A, Nath V (2021) Performance optimization of solar cells using non-polar, semi-polar and polar InGaN/GaN multiple quantum wells alongside AlGaN blocking layers. Microsyst Technol 27:301–306 Onno A, Harder N, Oberbeck L, Liu H (2016) Simulation study of GaAsP/Si tandem solar cells. Sol Energy Mater Sol Cells 45:206–216 Sa Sailan S, Milakovich T, Hadi S, Nayfeh A, Fitzgerald EA, Dahlem MS (2015) Multilayer antireflection coating design for GaAs0.69P0.31 /Si dual-junction solar cells. Solar Energy 122:76–86 Saket O, Himwas C, Cattoni A, Oehler F, Bayle F, Collin S, Travers L, Babichev A, Julien F, Harmand J, Tchernycheva M (2020) Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires. Appl Phys Lett 117:123104 Sukeerthi M, Kotamraju S, Puthanveettil S (2019) Study of deep level defects in InGaP/InGaAs-GaAsP/InGaAsN quantum well based multi-junction solar cell using finite element analysis. Superlattices Microstruct 130:28–37 Suzuki T, Soga T, Jimbo T, Umeno M (1991) Growth mechanism of GaP on Si substrate by MOVPE. J Cryst Growth 115:158–163 Toprasertpong K, Fujii H, Wang Y, Watanabe K, Sugiyama M, Nakano Y (2014) Carrier escape time and temperature-dependent carrier collection efficiency of tunneling-enhanced multiple quantum well SolarCells. IEEE J Photovolt 4(2):607–613 Wang L, Pollard M, Juhl M, Conrad B, Soeriyadi A, Li D, Lochtefeld A, Gerger A, Bagnall D, Barnett A, Wurfl I (2017) Spectral response of steady-state photoluminescence from GaAs1-xPx layers grown on a SiGe/Si system. Appl Phys Lett 111:121103 Yaung K, Vaisman M, Lang J, Lee M (2016) GaAsP solar cells on GaP/Si with low threading dislocation density. Appl Phys Lett 109:032107