Plasma chemical vapor deposition of TiN
Tóm tắt
Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater than 2000 kg/mm2 (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness, and microstructures has been studied.
Tài liệu tham khảo
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