Periodic GaAs Convex and Hole Arrays Produced by Metal-Assisted Chemical Etching

Japanese Journal of Applied Physics - Tập 49 Số 11R - Trang 116502 - 2010
Yukiko Yasukawa1, Hidetaka Asoh2, Sachiko Ono2
1Research Institute for Science and Technology, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo, 192-0015, Japan
2Department of Applied Chemistry, Faculty of Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan

Tóm tắt

Periodically ordered GaAs convex and hole arrays were fabricated through a combination of colloidal crystal templating and metal-assisted chemical etching using an ion-sputtered Pt–Pd catalyst. A change in the hydrofluoric acid concentration in the etchant results in different morphologies of hole arrays, such as circular and hexagonal holes. Pt–Pd-assisted chemical etching realizes an etching structure having an aspect ratio that is better than those realized by Ag-, Pd-, and Au-assisted chemical etching. GaAs undergoing Pt–Pd-assisted chemical etching exhibited anisotropy of the etching rates with respect to the two-dimensional crystallography of the substrate.

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Tài liệu tham khảo

1996, Appl. Phys. Lett., 69, 1620, 10.1063/1.117050

2001, J. Cryst. Growth, 227–228, 1049, 10.1016/S0022-0248(01)00986-1

2002, J. Cryst. Growth, 237–239, 1291, 10.1016/S0022-0248(01)02147-9

2000, Appl. Phys. Lett., 77, 2572, 10.1063/1.1319191

2007, Electrochim. Acta, 53, 28, 10.1016/j.electacta.2007.01.035

2006, Sol. Energy Mater. Sol. Cells, 90, 100, 10.1016/j.solmat.2005.02.019

2009, Sol. Energy Mater. Sol. Cells, 93, 1488, 10.1016/j.solmat.2009.03.027

2007, Electrochem. Commun., 9, 535, 10.1016/j.elecom.2006.10.041

2007, ECS Trans., 6, N

2008, Appl. Phys. Express, 1, 067003, 10.1143/APEX.1.067003

2008, Denki Kagaku, 76, 187

2009, Electrochim. Acta, 54, 5142, 10.1016/j.electacta.2009.01.050

2008, Electrochem. Commun., 10, 757, 10.1016/j.elecom.2008.02.024

2008, ECS Trans., 13, N

2008, ECS Trans., 16, N

2009, J. Electrochem. Soc., 156, H777, 10.1149/1.3187239

1975, Phys. Status Solidi A, 27, 223, 10.1002/pssa.2210270126

1974, Thin Solid Films, 21, 51, 10.1016/0040-6090(74)90089-3

1970, Phys. Rev. B, 2, 1, 10.1103/PhysRevB.2.1

2005, Electrochem. Solid-State Lett., 8, C193, 10.1149/1.2109347

2009, ECS Trans., 19, N

2002

2001, Hitachi Cable, 20, 37

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Japanese Journal of Applied Physics

Tập 49 Số 11R

116502

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