Optical characterizations of semiconducting /spl beta/-FeSi/sub 2/ films prepared by thermal annealing
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 375-378
Tóm tắt
Since /spl beta/-FeSi/sub 2/ is a potential candidate for optoelectronic devices its optical properties have received recent attention of the researchers. We report here optical absorption and reflection, photoluminescence, FTIR, Raman and Micro Raman spectroscopy/mapping of /spl beta/-FeSi/sub 2/ thin films on Si produced by thermal processing. Optical absorption and reflectance reveal that the material has a direct forbidden energy gap with appreciable sub band gap defect density. The photoluminescence was observed at 25 K but indicates a relative strain in the film, which is. further supported by Raman spectroscopy. Micro Raman mapping and spectra clearly indicates the formation of FeSi/sub 2/ along with some iron oxide.
Từ khóa
#Semiconductivity #Optical films #Optical devices #Absorption #Photoluminescence #Raman scattering #Spectroscopy #Optoelectronic devices #Optical reflection #Semiconductor thin filmsTài liệu tham khảo
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