On the possibility of applying the bers apparatus to modeling the processes of heat and mass transfer caused by electrons in a planar multilayer medium

Yu. A. Gladyshev1, V. V. Kalmanovich1, M. A. Stepovich1
1Kaluga State University, Kaluga, Russia

Tóm tắt

Some possibilities of joint application of the Bers factorial-function apparatus and matrix method to the mathematical modeling of heat and mass transfer processes in a multilayer medium are considered. The possibility of using this method is shown by the example of the diffusion of minority charge carriers generated by a wide electron beam in multilayer semiconductor planar structures. The results of calculations by this method for homogeneous and three-layer semiconductor structures are presented.

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