On the optimal shape and location of silicided source and drain contacts
Tóm tắt
A detailed simulation and analysis of the source/drain resistance is performed. It is shown that the placement and depth of silicide regions can have a strong influence on the total source/drain resistance. Simulations further show that moving the silicided regions closer to the channel of a device will not necessarily decrease source/drain resistance, and may actually cause the resistance to increase. Lumped contact resistance, distributed resistance, Schottky contact models, and a new local distributed resistance model are compared.
Từ khóa
#Shape #Contact resistance #Silicides #Schottky barriers #Semiconductor process modeling #Doping profiles #Ohmic contacts #Research and development #Microelectronics #Analytical modelsTài liệu tham khảo
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