On density-gradient modeling of tunneling through insulators
Tóm tắt
The density gradient model (DG) is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers show the limitations of the DG model. As a reference the Schrodinger-Bardeen method is taken. 'Resonant tunneling' in the density gradient model turns out to be an artifact related to large density differences in the semiconductor regions.
Từ khóa
#Tunneling #Insulation #MOSFETs #Charge carrier processes #Modeling #Schrodinger equation #Partial differential equations #Poisson equations #Laboratories #Electronic mailTài liệu tham khảo
10.1109/16.848290
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