Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors

Korde, 1987, Stable, high quantum efficiency, UV enhanced silicon photodiodes by arsenic diffusion, Solid-State Electron, 30, 89, 10.1016/0038-1101(87)90034-7 Razeghi, 1996, Semiconductor ultraviolet detectors, J Appl Phys, 79, 7433, 10.1063/1.362677 Fang, 1992, An amorphous SiC/Si heterojunction p–i–n diode for low-noise and high-sensitivity UV detector, IEEE Trans Electron Dev, 39, 292, 10.1109/16.121685 Mandracci, 1999, Stability and quantum efficiency of a novel type a-Si:H/a-SiC:H based UV detector, Thin Solid Films, 337, 232, 10.1016/S0040-6090(98)01383-2 de Cesare, 1996, Amorphous silicon UV photodetectors with rejection of the visible spectrum, J Non-Cryst Solids, 198–200, 1198, 10.1016/0022-3093(96)00112-3 Mandracci, 1999, Large area and high sensitivity a-Si:H/a-SiC:H based detectors for visible and ultraviolet light, Rev Sci Instrum, 70, 2235, 10.1063/1.1149743 Catalano, 1991 Misawa, 1966, Negative resistance in p–n junctions under avalanche breakdown conditions, Part II, IEEE Trans Electron Dev, 13, 141 Beale, 1992, Anomalous reactance behaviour during the impedance analysis of time-varying dielectric systems, Philos Mag B, 65, 47, 10.1080/13642819208223046 Laux, 1985, Techniques for small-al analysis of semiconductor devices, IEEE Trans Comput Aided Design Integr Circ, 4, 472, 10.1109/TCAD.1985.1270145 Ershov, 1997, Unusual capacitance behaviour during the impedance analysis of time-varying dielectric systems, Appl Phys Lett, 70, 1828, 10.1063/1.118704 Lemmi, 1999, Negative capacitance in forward biased hydrogenated amorphous silicon p+−i−n+diodes, Appl Phys Lett, 74, 251, 10.1063/1.123271 Furlan, 1996, Small-signal capacitance and conductance of biased a-Si structures, J Appl Phys, 80, 3854, 10.1063/1.363340 Wu, 1990, Negative capacitance at metal-semiconductor interfaces, J Appl Phys, 68, 2845, 10.1063/1.346442