Numerical study of the effect of the doping profile on the threshold voltage of narrow-channel MOS transistor

Solid-State Electronics - Tập 30 - Trang 1305-1315 - 1987
Asen M. Asenov1, Evgeny N. Stefanov1
1Institute of Microelectronics, 7th km, Lenin Blvd., Sofia 1784, Bulgaria

Tài liệu tham khảo

Jeppson, 1975, Electron. Lett., 11, 297, 10.1049/el:19750225 Merckel, 1980, Solid-St. Elecltron., 23, 1207, 10.1016/0038-1101(80)90114-8 Jantsch, 1982, Solid-St. Electron., 25, 59, 10.1016/0038-1101(82)90095-8 Cheng, 1984, IEEE Trans. Electron Dev., ED-31, 1814, 10.1109/T-ED.1984.21794 Akers, 1981, IEEE Trans. Electron Dev., ED-28, 1490, 10.1109/T-ED.1981.20635 Kroell, 1976, Solid-St. Electron., 19, 74 Shigyo, 1982, Electron. Lett., 18, 274, 10.1049/el:19820187 Lai, 1985, Solid-St. Elelctron., 28, 551, 10.1016/0038-1101(85)90124-8 Sugino, 1983, IEEE Electron Dev. Lett., EDL-4, 114, 10.1109/EDL.1983.25668 Ji, 1983, IEEE Trans. Electron Dev., ED-30, 635 Ji, 1983, IEEE Trans. Electron Dev., ED-30, 1672 Veveris, 1983, 287 Kasai, 1982, IEEE Trans. Electron Dev., ED-29, 870, 10.1109/T-ED.1982.20792 Burkey, 1984, IEEE Trans. Electron Dev., ED-31, 423, 10.1109/T-ED.1984.21545 Buturla, 1981, IBM J. Res. Develop., 25, 218, 10.1147/rd.254.0218 Iizuka, 1981, IEDM Tech. Dig., 380 Shigyo, 1984, Electron. Commun. Jap., 67-C, 73 Shigyo, 1985, IEEE J. Solid-St. Circ., SC-20, 361, 10.1109/JSSC.1985.1052315 Klose, 1986, Solid-St. Electron., 29, 371, 10.1016/0038-1101(86)90217-0 Asenov, 1985 Asenov, 1985, 630 Penumalli, 1983, IEEE Trans. Electron Dev., ED-30, 986, 10.1109/T-ED.1983.21251 Maldonado, 1983, Appl. Phys., 31A, 119, 10.1007/BF00624718 Collard, 1984, COMPEL, 3, 17, 10.1108/eb009985 Runge, 1977, Physica Status Solidi, 39a, 595, 10.1002/pssa.2210390228 Lee, 1981, IEEE Trans. Electron Dev., ED-28, 1136 Hu, 1969, Phys. Rev., 180, 773, 10.1103/PhysRev.180.773 Taniguchi, 1980, J. Electrochem. Soc., 127, 2243, 10.1149/1.2129384 Lin, 1977, Appl. Phys. Lett., 35, 799, 10.1063/1.90941 Fair, 1977, J. Electrochem. Soc., 124, 1107, 10.1149/1.2133492 Fair, 1979, J. appl. Phys., 50, 860, 10.1063/1.326001 Tsai, 1980, J. appl. Phys., 51, 3230, 10.1063/1.328078 Samarskii, 1983 Asenov, 1987, Int. J. Electron., 62, 843, 10.1080/00207218708921036