Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

Journal of Applied Physics - Tập 111 Số 4 - 2012
Shu Hu1, Paul C. McIntyre1,2
1Department of Materials Science and Engineering, Stanford University 1 , Stanford, California 94305, USA
2Geballe Laboratory for Advanced Materials, Stanford University, Stanford 2 , California 94305, USA

Tóm tắt

The kinetics of Al-catalyzed layer exchange crystallization of amorphous germanium (Ge) thin films at low temperatures is reported. Observation of Ge mass transport from an underlying amorphous Ge layer to the Al film surface through an interposed sub-nanometer GeOx interfacial layer allows independent measurement of the areal density and average area of crystalline Ge islands formed on the film surface. We show that bias-voltage stressing of the interfacial layer can be used to control the areal density of nucleated Ge islands. Based on experimental observations, the Johnson-Mehl-Avrami-Kolmogorov phase transformation theory is used to model nanoscale nucleation and growth of Ge islands in two dimensions. Ge island nucleation kinetics follows an exponentially decaying nucleation rate with time. Ge island growth kinetics switches from linear growth at a constant growth velocity to diffusion-limited growth as the growth front advances. The transition point between these two regimes depends on the Ge nucleation site density and the annealing temperature. Knowledge of the kinetics of low-temperature crystallization is important in achieving textured polycrystalline Ge thin films with large grains for applications in large-area electronics and solar energy conversion.

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Journal of Applied Physics

Tập 111 Số 4

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