Novel optical structure for micromachined wavelength-selective and tunable InP based MOEMS
IEEE/LEOS International Conference on Optical MEMs - Trang 203-204
Tóm tắt
The paper describes a new concept for the fabrication of integrated wavelength selective photo-detectors (or emitters). These devices are based on the InP/InGaAs semiconductor system for application in the wavelength range from 1.1 to 1.7 /spl mu/m. Such integrated wavelength selective and tunable active devices are expected to be cost effective solutions for NIR spectroscopy or WDM optical communications.
Từ khóa
#Indium phosphide #Optical filters #Resonance #Optical sensors #Optical design #High speed optical techniques #Optical pumping #Optical device fabrication #Optical devices #Wavelength division multiplexingTài liệu tham khảo
bondavalli, 1999, Optical and mechanical design of an InP based tunable detector for gas sensing applications - “Micromachining and Microfabrication, Proceedings of SPIE, 3878, 10.1117/12.361259
viktorovitch, 2001, Semiconductor based MOEMS devices for optical telecommunications, invited paper at Micro & Nano Engineering 2001
10.1109/68.705609