Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Solid-State Electronics - Tập 141 - Trang 7-12 - 2018
Dong-Hyeok Son1, Young‐Woo Jo1, Chul‐Ho Won1, J. H. Lee1, Jae Hwa Seo1, Sang‐Heung Lee2, Jong-Won Lim2, Ji Heon Kim2, In Man Kang1, S. Cristoloveanu3, Jung‐Hee Lee1
1Kyungpook National University [Daegu]
2Electronics and Telecommunications Research Institute [DaeJeon]
3Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

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Tài liệu tham khảo

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