Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching
Tóm tắt
Từ khóa
Tài liệu tham khảo
Chow, 1994, Wide bandgap compound semiconductors for superior high-voltage unipolar power devices, IEEE Trans Electron Dev, 41, 1481, 10.1109/16.297751
Mishra, 2002, AlGaN/GaN HEMTs - an overview of device operation and application, Proc IEEE, 90, 1022, 10.1109/JPROC.2002.1021567
Oka, 2008, AlGaN/GaN recessed MIS-gate HFET with highthreshold-voltage normally-off operation for power electronics applications, IEEE Electron Dev Lett, 29, 668, 10.1109/LED.2008.2000607
Kim, 2011, Effects of TMAH treatment on device performance of normally off Al2O3/GaN MOS-HEMT, IEEE Electron Dev Lett, 32, 1376, 10.1109/LED.2011.2163293
Kim, 2011, Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs, Microelectron Eng, 88, 1225, 10.1016/j.mee.2011.03.116
Im, 2013, Normally off single nanoribbon Al2O3/GaN MISFET, IEEE Electron Dev Lett, 34, 27, 10.1109/LED.2012.2222861
Jo, 2015, AlGaN/GaN FinFET with extremely broad transconductance by side-wall wet etch, IEEE Electron Dev Lett, 36, 1008, 10.1109/LED.2015.2466096
Xu, 2013, Fabrication of normally off AlGaN/GaN MOS-HEMT using a self-terminating gate recess etching technique, IEEE Electron Dev Lett, 34, 855, 10.1109/LED.2013.2264494
Wang, 2013, High-performance normally-Off Al2O3/GaN MOS-HEMT using a wet etching-based gate recess technique, IEEE Electron Dev Lett, 34, 1370, 10.1109/LED.2013.2279844
Guo, 2015, KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode, Appl Phys Lett, 106, 082110, 10.1063/1.4913705
Buttari, 2002, Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs, Proc IEEE, 461
Im, 2016, Lateral GaN nanowire prepared by using two-step TMAH wet etching and HfO2 sidewall spacer, J Cryst Growth, 441, 41, 10.1016/j.jcrysgro.2016.01.038
Sanabria, 2006, The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs, IEEE Electron Dev Lett, 27, 19, 10.1109/LED.2005.860889
Hsieh, 2014, Gate recessed quasi-normally OFF Al2O3/AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using PEALD AlN interfacial passivation layer, IEEE Electron Dev Lett, 35, 732, 10.1109/LED.2014.2321003
Liu, 2015, Thermally stable enhancement-mode GaN metal-insulator -semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier, IEEE Electron Dev Lett, 36, 318, 10.1109/LED.2015.2403954