New CMOS circuit implementation of a one-bit full-adder cell

Pleiades Publishing Ltd - Tập 40 - Trang 119-127 - 2011
V. V. Shubin1
1Semiconductor-Device and Microelectronics Department, Novosibirsk State Technical University, Novosibirsk, Russia

Tóm tắt

A new mirror CMOS circuit implementation of a one-bit full-adder cell is proposed. Using CMOS technology provides zero static power consumption and the freedom from fractional voltage levels at the internal nodes (no voltage recovery is needed). The solution proposed is shown to be superior in carry speed to any alternative CMOS implementation reported so far, and should therefore be suitable for building high-speed multibit adders.

Tài liệu tham khảo

Rabaey, J.M., Chandrakasan, A., and Nikolic, B., Digital Integrated Circuits, A Design Perspective, Englewood Cliffs, N.J.: Prentice Hall, 2002, 2nd ed. Uyemura, J., CMOS Logic Circuit Design, Kluwer, 1999. Weste, N. and Eshragian, K., Principles of CMOS VLSI Design: A Systems Perspective, Addison-Wesley, 1993. Zimmermann, R. and Fichtner, W., Low-Power Logic Styles: CMOS versus Pass-Transistor Logic, IEEE J. Solid-State Circuits, 1997, vol. 32, pp. 1079–1090. Khatibzaden, A.A. and Raamran, K., A 14-Transistor Low-Power High-Speed Full Adder Cell, Department of Electrical and Computer Engineering Ryerson Universiry, Toronto, Ontario, Canada, M5B 2K3, CCECE 2003 — CCGEI 2003, Montreal, 2003. Navi, K., Kavehie, O., Rouholamini, M., Sahafi, A., and Mehrabi, S., A Novel CMOS Full Adder, in 20th Int. Conf. on VLSI Design (VLSID’07), 2007. Abu-Khater, I.S., Bellaouar, A., and Elmasry, M.I., Circuit Techniques for CMOS Low-Power High-Performance Multipliers, IEEE J. Solid-State Circuits, 1996, vol. 31, no. 10, pp. 1535–1546. Ko, U., Balsara, T., and Lee, W., Low-Power Design Techniques for High Performance CMOS Adders, IEEE Trans. VLSI Syst., 1995, vol. 3, no. 2, pp. 327–333. Yuan, J. and Svensson, C., High-Speed CMOS Circuit Technique, IEEE J. Solid-State Circuits, 1989, vol. 24, no. 1, pp. 62–70. Abu-Khater, I.S., Bellaouar, A., and Elmasry, M.I., Circuit Techniques for CMOS Low-Power High-Performance Multipliers, IEEE J. Solid-State Circuits, 1996, vol. 31, no. 10, pp. 1535–1546. Sicard, E. and Bendhia, S.D., Basics of CMOS Cell Design, McGraw-Hill, 2007. Alioto, M. and Palumbo, G., Analysis and Comparison on Full Adder Block in Submicron Technology, IEEE Trans. VLSI Syst., 2002, vol. 10, no. 6, pp. 806–823. Goel, S., Gollamudi, S., Kumar, A., and Bayoumi, M., On the Design of Low-Energy Hybrid CMOS 1-Bit Full Adder Cells, in Proc. 2004 27th Midwest Symp. on Circuits and Systems, 2004, vol. 2, pp. 209–212. Chang, C.-H., Gu, J., and Zhang, M., A Review of 0.18-[mu]m Full Adder Performances for Tree Structured Arithmetic Circuits, IEEE Trans. VLSI Syst., 2005, vol. 13, no. 6, pp. 686–695. Amosov, V.V., Skhemotekhnika i sredstva proektirovaniya tsifrovykh ustroistv (Digital-Circuit Fundamentals and Design Tools), St. Petersburg: BKhV-Peterburg, 2007. Kursun, V. and Friedman, E.G., Multi-voltage CMOS Circuit Design, Wiley, 2006. Bykov, S.V., USSR Inventor’s Certificate no. 1 034 031, 1983. Zhuang, N. and Wu, H., A New Design of the CMOS Full Adder, IEEE J. Solid-State Circuits, 1992, vol. 27, no. 5, pp. 840–844. Kaeslin, H., Digital Integrated Circuit Design from VLSI Architectures to CMOS Fabrication, New York: Cambridge Univ. Press, 2008. Kanuma, A., CMOS Circuit Optimization, Solid-State Electron., 1983, vol. 26, no. 1, pp. 47–58. Shubin, V.V., RF Patent 2380739. Hsu, Y.-M. and Swartzlander, E.E., Measuring Delay Time in Adders Using Simulation, in Proc. 37th Midwest Symp. on Circuits and Systems, 1994, vol. 1, pp. 265–268. Shams, A.M., Darwish, T.K., and Bayoumi, M., Performance Analysis of Low-Power 1-Bit CMOS Full Adder Cells, IEEE Trans. VLSI Syst., 2002, vol. 10, no. 1, pp. 20–29. Rakitin, V.V., Integral’nye skhemy na KMOP-tranzistorakh (CMOS Integrated Circuits), Moscow: MFTI, 2007.