Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates
Tóm tắt
The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.
Từ khóa
Tài liệu tham khảo
2011, International Conference on Information Photonics, 1
See supplementary material-Figure S1-at http://dx.doi.org/10.1063/1.4851875 for an overview of the adapted positioning system, a close-up image of the stages and transferring arm, Figure S2 for a schematic of a flexible device assembly, and a video of the transfer printing of suspended LEDs from their native substrates to a flexible substrate using a 4 × 4 elastomeric stamp.