Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

Applied Physics Letters - Tập 103 Số 25 - 2013
António José Trindade1, Benoit Guilhabert1, D. Massoubre1, Dandan Zhu2, N. Laurand1, Erdan Gu1, I. M. Watson1, C. J. Humphreys2, Martin D. Dawson1
1Institute of Photonics, SUPA, University of Strathclyde 1 , 106 Rottenrow, Glasgow G4 0NW, United Kingdom
2Department of Materials Science and Metallurgy, University of Cambridge 2 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

Tóm tắt

The transfer printing of 2 μm-thick aluminum indium gallium nitride (AlInGaN) micron-size light-emitting diodes with 150 nm (±14 nm) minimum spacing is reported. The thin AlInGaN structures were assembled onto mechanically flexible polyethyleneterephthalate/polydimethylsiloxane substrates in a representative 16 × 16 array format using a modified dip-pen nano-patterning system. Devices in the array were positioned using a pre-calculated set of coordinates to demonstrate an automated transfer printing process. Individual printed array elements showed blue emission centered at 486 nm with a forward-directed optical output power up to 80 μW (355 mW/cm2) when operated at a current density of 20 A/cm2.

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See supplementary material-Figure S1-at http://dx.doi.org/10.1063/1.4851875 for an overview of the adapted positioning system, a close-up image of the stages and transferring arm, Figure S2 for a schematic of a flexible device assembly, and a video of the transfer printing of suspended LEDs from their native substrates to a flexible substrate using a 4 × 4 elastomeric stamp.

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Applied Physics Letters

Tập 103 Số 25

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