Xinran Wang1, Xiaolin Li1, Li Zhang1, Youngki Yoon2, Peter K. Weber3, Hailiang Wang1, Jing Guo2, Hongjie Dai1
1Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.
2Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA
3Chemical Sciences Division, Lawrence Livermore National Laboratory (LLNL), Livermore, CA 94550, USA.
Tóm tắt
Negatively Doped Graphene Nanoribbons
The potential applications in electronic devices of graphene (single atom, thick layers of graphite) would be even greater if it can be accessed in both p- and n-doped forms. Graphene nanoribbons (long strips only tens of nanometers in width) are readily p-doped by adsorbates from the ambient atmosphere.
Wang
et al.
(p.
768
) show that when graphene nano-ribbons are electrically heated in an ammonia atmosphere, nitrogen is incorporated mainly at the edges of the ribbon and creates an n-type material. Field-effect transistors that operate at room temperature can be made from this material.
