Multilayer tunneling barriers for nonvolatile memory applications
60th DRC. Conference Digest Device Research Conference - Trang 153-154
Tóm tắt
A tunnel barrier consisting of two materials with different dielectric constant is demonstrated to show that improved programming and/or erasing performance is obtained compared to conventional oxide layers. It is also shown that charge trapping is not a showstopper for the application of such stacks in floating gate nonvolatile memory devices.
Từ khóa
#Nonhomogeneous media #Tunneling #Nonvolatile memory #Capacitors #Dielectric constant #Low voltage #High K dielectric materials #Testing #EPROM #Lead compoundsTài liệu tham khảo
govoreanu, 0, Proc 2001 IEEE SISPAD, 270
10.1063/1.122402
houssa, 2000, J Appl Phys, 87, 10.1063/1.373587
blomme, 0, US patent pending
choi, 0, Proc IEDM 2000, 767
0, ITRS roadmap 2001 Front End Processes, 37