Morphological, structural, and photoelectrochemical characterization of n‐type Cu2O thin films obtained by electrodeposition

Physica Status Solidi (A) Applications and Materials Science - Tập 209 Số 12 - Trang 2470-2475 - 2012
Paula Grez1, Francisco Herrera2, G. Riveros3, A. M. R. Ramírez1, Rodrigo Henríquez1, Enrique A. Dalchiele4, Ricardo Schrebler1
1Instituto de Química, Pontificia Universidad Católica de Valparaíso, Avda. Universidad 330, Curauma, Placilla,Valparaíso Casilla, 4059 Valparaíso, Chile
2Departamento de Química de los Materiales, Facultad de Química y Biología, Universidad de Santiago de Chile, Avenida Libertador Bernardo O'Higgins n° 3363, Estación Central, Santiago, Chile
3Departamento de Química y Bioquímica, Facultad de Ciencias, Universidad de Valparaíso, Avenida Gran Bretaña 1111, Playa Ancha, Valparaíso, Chile
4Instituto de Física, Facultad de Ingeniería, Universidad de la República, Herrera y Reissig 565, C.C. 30, 11000 Montevideo, Uruguay

Tóm tắt

AbstractThin films of copper(I) oxide (Cu2O) were electrodeposited on fluorine‐doped tin oxide predeposited glass substrates, by reduction of Cu2+ from Cu(II) acetate acid aqueous solutions. The Cu2O was potentiostatically grown at a potential value of −0.450 V (vs. SMSE) at 70 °C. The Cu2O thin films were characterized by means of scanning electron microscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy (XPS), optical transmission, electrochemical impedance spectroscopy, and photoelectrochemical experiments. Through these techniques, it was possible to establish the cubic Cu2O phase with a high crystallinity and a strong preferential growth along the [200] and [220] directions. Cu2O thin films show oxygen vacancies with formation of a nonstoichiometric compound with the presence of Cu(0) in the crystal lattice as determined by XPS analysis. In addition, Cu2O was used as the photoanode for the I− oxidation reaction when the system was illuminated (Φ0 = 50.0 mW cm−2). The films exhibited a clear n‐type semiconductor behavior, which was in agreement with the Mott–Schottky results. This behavior was explained by considering the nonstoichiometry of the oxide.

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Thông tin xuất bản

Physica Status Solidi (A) Applications and Materials Science

Tập 209 Số 12

2470-2475

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