Molecular Dynamics Simulation of Nanoindentation-induced Mechanical Deformation and Phase Transformation in Monocrystalline Silicon

Nanoscale Research Letters - Tập 3 Số 2 - 2008
Yen‐Hung Lin1, Sheng-Rui Jian2, Yi‐Shao Lai3, Ping-Feng Yang3
1Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC
2Department of Materials Science and Engineering, I-Shou University, Kaohsiung, Taiwan, ROC
3Central Labs, Advanced Semiconductor Engineering, Inc., Kaohsiung, Taiwan, ROC

Tóm tắt

Abstract This work presents the molecular dynamics approach toward mechanical deformation and phase transformation mechanisms of monocrystalline Si(100) subjected to nanoindentation. We demonstrate phase distributions during loading and unloading stages of both spherical and Berkovich nanoindentations. By searching the presence of the fifth neighboring atom within a non-bonding length, Si-III and Si-XII have been successfully distinguished from Si-I. Crystallinity of this mixed-phase was further identified by radial distribution functions.

Từ khóa


Tài liệu tham khảo

Clarke DR, Kroll MC, Kirchner PD, Cook RF, Hockey BJ: Amorphization and conductivity of silicon and germanium induced by indentation. Phys. Rev. Lett. 1988,60(21):2156–2159. COI number [1:CAS:528:DyaL1cXks1Cltbc%3D] COI number [1:CAS:528:DyaL1cXks1Cltbc%3D] 10.1103/PhysRevLett.60.2156

Wu YQ, Yang XY, Xu YB: Cross-sectional electron microscopy observation on the amorphized indentation region in [001] single-crystal silicon. Acta Mater. 1999,47(80):2431–2436. COI number [1:CAS:528:DyaK1MXkvVyntro%3D] COI number [1:CAS:528:DyaK1MXkvVyntro%3D] 10.1016/S1359-6454(99)00091-9

Domnich V, Gogotsi Y, Dub S: Effect of phase transformations on the shape of the unloading curve in the nanoindentation of silicon. Appl. Phys. Lett. 2000,76(16):2214–2216. COI number [1:CAS:528:DC%2BD3cXisVGitb0%3D] COI number [1:CAS:528:DC%2BD3cXisVGitb0%3D] 10.1063/1.126300

Mann AB, van Heerden D, Pethica JB, Weihs TP: Size-dependent phase transformations during point loading of silicon. J. Mater. Res. 2000,15(8):1754–1758. COI number [1:CAS:528:DC%2BD3cXlsFOlur0%3D] COI number [1:CAS:528:DC%2BD3cXlsFOlur0%3D]

Bradby JE, Williams JS, Wong-Leung J, Swain MV, Munroe P: Mechanical deformation in silicon by micro-indentation. J. Mater. Res. 2001,16(5):1500–1507. COI number [1:CAS:528:DC%2BD3MXjt12ksL0%3D] COI number [1:CAS:528:DC%2BD3MXjt12ksL0%3D] 10.1557/JMR.2001.0209

Juliano T, Gogotsi Y, Domnich V: Effect of indentation unloading conditions on phase transformation induced events in silicon. J. Mater. Res. 2003,18(5):1192–1201. COI number [1:CAS:528:DC%2BD3sXjsFCkurw%3D] COI number [1:CAS:528:DC%2BD3sXjsFCkurw%3D]

Kailer A, Gogotsi YG, Nickel KG: Phase transformations of silicon caused by contact loading. J. Appl. Phys. 1997,81(7):3057–3063. COI number [1:CAS:528:DyaK2sXit1ajt74%3D] COI number [1:CAS:528:DyaK2sXit1ajt74%3D] 10.1063/1.364340

Piltz RO, Maclean JR, Clark SJ, Ackland GJ, Hatton PD, Crain J: Structure and properties of silicon XII: a complex tetrahedrally bonded phase. Phys. Rev. B 1995,52(6):4072–4085. COI number [1:CAS:528:DyaK2MXnsFalsLo%3D] COI number [1:CAS:528:DyaK2MXnsFalsLo%3D] 10.1103/PhysRevB.52.4072

Jang J-I, Lance MJ, Wen S, Tsui TY, Pharr GM: Indentation-induced phase transformations in silicon: influences of load, rate and indenter angle on the transformation behavior. Acta Mater. 2005,53(6):1759–1770. COI number [1:CAS:528:DC%2BD2MXhs1GmurY%3D] COI number [1:CAS:528:DC%2BD2MXhs1GmurY%3D] 10.1016/j.actamat.2004.12.025

Zarudi I, Zhang LC, Swain MV: Microstructure evolution in monocrystalline silicon in cyclic microindentations. J. Mater. Res. 2003,18(4):758–761. COI number [1:CAS:528:DC%2BD3sXivVeltro%3D] COI number [1:CAS:528:DC%2BD3sXivVeltro%3D]

Zarudi I, Zhang LC, Swain MV: Behavior of monocrystalline silicon under cyclic microindentations with a spherical indenter. Appl. Phys. Lett. 2003,82(7):1027–1029. COI number [1:CAS:528:DC%2BD3sXht1ClsLs%3D] COI number [1:CAS:528:DC%2BD3sXht1ClsLs%3D] 10.1063/1.1541110

Cheong WCD, Zhang LC: Molecular dynamics simulation of phase transformations in silicon monocrystals due to nano-indentation. Nanotechnology 2000,11(3):173–180. COI number [1:CAS:528:DC%2BD3cXnsVekt7o%3D] COI number [1:CAS:528:DC%2BD3cXnsVekt7o%3D] 10.1088/0957-4484/11/3/307

Cheong WCD, Zhang LC: A stress criterion for the β-Sn transformation in silicon under indentation and uniaxial compression. Key Eng. Mater. 2003, 233–236: 603–608.

Zarudi I, Zhang LC, Cheong WCD, Yu TX: The difference of phase distributions in silicon after indentation with Berkovich and spherical indenters. Acta Mater. 2005,53(18):4795–4800. COI number [1:CAS:528:DC%2BD2MXhtVamsb7F] COI number [1:CAS:528:DC%2BD2MXhtVamsb7F] 10.1016/j.actamat.2005.06.030

Tersoff J: New empirical model for the structural properties of silicon. Phys. Rev. Lett. 1986,56(6):632–635. COI number [1:CAS:528:DyaL28XhtlKgtrY%3D] COI number [1:CAS:528:DyaL28XhtlKgtrY%3D] 10.1103/PhysRevLett.56.632

Tersoff J: New empirical approach for the structure and energy of covalent systems. Phys. Rev. B 1988,37(12):6991–7000. 10.1103/PhysRevB.37.6991

Tersoff J: Empirical interatomic potential for silicon with improved elastic properties. Phys. Rev. B 1988,38(14):9902–9905. COI number [1:CAS:528:DyaL1MXksFantQ%3D%3D] COI number [1:CAS:528:DyaL1MXksFantQ%3D%3D] 10.1103/PhysRevB.38.9902

Tersoff J: Modeling solid-state chemistry: interatomic potentials for multicomponent systems. Phys. Rev. B 1989,39(8):5566–5568. 10.1103/PhysRevB.39.5566

Lin Y-H, Chen T-C, Yang P-F, Jian S-R, Lai Y-S: Atomic-level simulations of nanoindentation-induced phase transformation in mono-crystalline silicon. Appl. Surf. Sci. 2007,254(5):1415–1422. COI number [1:CAS:528:DC%2BD2sXhtlGjurnK] COI number [1:CAS:528:DC%2BD2sXhtlGjurnK] 10.1016/j.apsusc.2007.06.071

Boyer LL, Kaxiras E, Feldman JL, Broughton JQ, Mehl MJ: New low-energy crystal structure for silicon. Phys. Rev. Lett. 1991,67(6):715–718. COI number [1:CAS:528:DyaK3MXlsVOjtL8%3D] COI number [1:CAS:528:DyaK3MXlsVOjtL8%3D] 10.1103/PhysRevLett.67.715

Kim DE, Oh SI: Atomistic simulation of structural phase transformations in monocrystalline silicon induced by nanoindentation. Nanotechnology 2006,17(9):2259–2265. COI number [1:CAS:528:DC%2BD28Xmtl2nur8%3D] COI number [1:CAS:528:DC%2BD28Xmtl2nur8%3D] 10.1088/0957-4484/17/9/031

Crain J, Clark SJ, Ackland GJ, Payne MC, Milman V, Hatton PD, Reid BJ: Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment. Phys. Rev. B 1994,49(8):5329–5340. COI number [1:CAS:528:DyaK2cXisFerur8%3D] COI number [1:CAS:528:DyaK2cXisFerur8%3D] 10.1103/PhysRevB.49.5329

Crain J, Ackland GJ, Maclean JR, Piltz RO, Hatton PD, Pawley GS: Reversible pressure-induced structural transitions between metastable phases of silicon. Phys. Rev. B 1994,50(17):13043–13046. COI number [1:CAS:528:DyaK2MXitVymtbg%3D] COI number [1:CAS:528:DyaK2MXitVymtbg%3D] 10.1103/PhysRevB.50.13043

Shimojo F, Ebbsjö I, Kalia RK, Nakano A, Rino JP, Vashishta P: Molecular dynamics simulation of structural transformation in silicon carbide under pressure. Phys. Rev. Lett. 2000,84(15):3338–3341. COI number [1:CAS:528:DC%2BD3cXitlWhur0%3D] COI number [1:CAS:528:DC%2BD3cXitlWhur0%3D] 10.1103/PhysRevLett.84.3338

Sanz-Navarro CF, Kenny SD, Smith R: Atomistic simulations of structural transformations of silicon surfaces under nanoindentation. Nanotechnology 2004,15(5):692–697. COI number [1:CAS:528:DC%2BD2cXlt1ert7w%3D] COI number [1:CAS:528:DC%2BD2cXlt1ert7w%3D] 10.1088/0957-4484/15/5/049