Modeling rail-span collapse in ICs exposed to a single radiation pulse

Pleiades Publishing Ltd - Tập 35 Số 3 - Trang 156-161 - 2006
A. I. Chumakov1
1Specialized Electronic Systems (SPELS), Moscow, Russia

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Tài liệu tham khảo

Agakhanyan, T.M., Astvatsatur’yan, E.R., and Skorobogatov, P.K., Radiatsionnye effekty v integral’nykh mikroskhemakh (Radiation Effects on Integrated Circuits), Moscow: Energoatomizdat, 1989.

Nikiforov, A.Y., Telets, V.A., and Chumakov, A.I., Radiatsionnye effekty v KMOP IS (Radiation Effects on CMOS ICs), Moscow: Radio i Svyaz’, 1994.

Massengill, L.W. and Diehl-Nagle, S.E., Transient Radiation Upset Simulations of CMOS Memory Circuits, IEEE Trans. Nucl. Sci., 1984, vol. 31, no. 6, pp. 1337–1343.

Woodruff, R.L., Nelson, D.A., and Scherr, S., Predicting Transient Upset in Gate Arrays, IEEE Trans. Nucl. Sci., 1987, vol. 34, no. 6, pp. 1426–1430.