Modeling of field-effect transistors with laterally graded doping

Solid-State Electronics - Tập 32 - Trang 791-795 - 1989
M.B. Patil1, S.N. Mohammad1, H. Morkoç1
1University of Illinois, Coordinated Science Laboratory and Material Research Laboratory, 1101 W. Springfield Avenue, Urbana, IL 61801, U.S.A.

Tài liệu tham khảo

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