Model for Radiation-Induced Charge Trapping and Annealing in the Oxide Layer of MOS Devices

Journal of Applied Physics - Tập 40 Số 12 - Trang 4886-4892 - 1969
C. W. Gwyn1
1Sandia Laboratories, Albuquerque, New Mexico 87115

Tóm tắt

A model is proposed to explain radiation damage and charge trapping in the oxide layer of MOS devices after exposure to ionizing radiation. This model is based upon the close similarity between radiation effects in the silicon dioxide layer and in fused silica. In addition to explaining the production of damage by ionization, the model has an advantage over other models inasmuch as the charge trapping in a relatively impurity-free silicon dioxide layer can be explained. The model explains radiation-induced charge trapping in the oxide and subsequent annealing of the charge as a function of temperature and exposure to ultraviolet radiation. In addition, the model suggests that the sensitivity of MOS devices to ionizing radiation can be reduced by decreasing the amorphous structure of the oxide.

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Thông tin
Thông tin xuất bản

Journal of Applied Physics

Tập 40 Số 12

4886-4892

Thông tin tác giả