MoS2 nanotube field effect transistors

AIP Advances - Tập 4 Số 9 - 2014
Martin Strojnik1, Andrej Kovič1,2, A. Mrzel1, Jože Buh1, Jure Strle1, D. Mihailovič3,1
1Jozef Stefan Institute 1 , Jamova cesta 39, 1000 Ljubljana, Slovenia
2Jozef Stefan International Postgraduate School 2 , Jamova cesta 39, 1000 Ljubljana, Slovenia
3Center of excellence in Nanoscience and Nanotechnology 3 , Jamova cesta 39, 1000 Ljubljana, Slovenia

Tóm tắt

We report on electric field effects on electron transport in multi-walled MoS2 nanotubes (NTs), fabricated using a two-step synthesis method from Mo6SxI9-x nanowire bundle precursors. Transport properties were measured on 20 single nanotube field effect transistor (FET) devices, and compared with MoS2 layered crystal devices prepared using identical fabrication techniques. The NTs exhibited mobilities of up to 0.014 cm2V−1s−1 and an on/off ratio of up to 60. As such they are comparable with previously reported WS2 nanotube FETs, but materials defects and imperfections apparently limit their performance compared with multilayer MoS2 FETs with similar number of layers.

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AIP Advances

Tập 4 Số 9

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