Microstructural evolution during film growth

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 21 Số 5 - Trang S117-S128 - 2003
I. Petrov1, P.B. Barna2, Lars Hultman3, J. E. Greene1
1Frederick Seitz Materials Research Laboratory and Department of Materials Science, University of Illinois, Urbana, Illinois 61801
2Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest H-1325, Hungary
3Thin Film Division, Physics Department, Linköping University, S-581 83 Linköping, Sweden

Tóm tắt

Atomic-scale control and manipulation of the microstructure of polycrystalline thin films during kinetically limited low-temperature deposition, crucial for a broad range of industrial applications, has been a leading goal of materials science during the past decades. Here, we review the present understanding of film growth processes—nucleation, coalescence, competitive grain growth, and recrystallization—and their role in microstructural evolution as a function of deposition variables including temperature, the presence of reactive species, and the use of low-energy ion irradiation during growth.

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Thông tin xuất bản

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Tập 21 Số 5

S117-S128

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