Memory device based on a ferroelectric tunnel junction

For the first time tunnel junctions with a ferroelectric barrier (FTJ) have been prepared and a bi-stable and highly reproducible hysteresis in the I-V curve and the bias dependence of the dynamic conductance has been measured. This behavior will be discussed in the framework of a possible new effect based on the interplay between the polarization state in the barrier and direct electron tunneling through the barrier.