Mechanisms of Plasma Etching of Titanium, Indium, Tin, and Zinc Oxides in a Mixture of HBr + Ar
Tóm tắt
The kinetics and mechanisms of reactive ion etching of titanium oxides (TiO2), indium (In2O3), tin (SnO2), and zinc (ZnO) in HBr + Ar plasma. It is found that an increase in the fraction of Ar is accompanied by a decrease in the etching rates of all the materials under study, while the absolute values of the rates for any composition of the mixture are correlated to the value of the breaking energy of the oxide bond and/or the volatility of the interaction products. With the combined use of methods of diagnostics and plasma modeling, the stationary concentrations of active particles and the density of their fluxes on the treated surface are determined. The use of these data for the analysis of the kinetics of heterogeneous processes showed that (a) the dominant etching mechanism in the range 0–75% Ar is an ion-stimulated chemical reaction; and (b) the effective probability of the interaction of bromine atoms increases (for TiO2) or decreases (for In2O3, SnO2, and ZnO) with the increasing dilution of HBr with argon. Assumptions are made about the reasons for this dependence.
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