Measurement of local thickness of oxide layer and its electronic characteristics by scanning tunneling microscopy

Pleiades Publishing Ltd - Tập 8 - Trang 627-630 - 2013
A. K. Gatin1, M. V. Grishin1, A. A. Kirsankin1, M. A. Kozhushner1, V. S. Posvyanskii1, V. A. Kharitonov1, B. R. Shub1
1Federal State Budget Institution of Science, Semenov Institute of Chemical Physics, Russian Academy of Sciences, Moscow, Russia

Tóm tắt

A method for determining local thicknesses and parameters of the electronic structure of thin oxide films, as well as of absolute values of the distance between the tip of the scanning tunneling microscope and the surface of the sample under study, are presented in this work.

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