Measurement of Third-Order Moduli of Silicon and Germanium

Journal of Applied Physics - Tập 35 Số 11 - Trang 3312-3319 - 1964
H. J. McSkimin1, P. Andreatch1
1Bell Telephone Laboratories, Incorporated Murray Hill, New Jersey

Tóm tắt

Experimental techniques for determining third-order moduli of single crystals by means of ultrasonic wave propagation are described. Results for silicon and germanium demonstrate a good degree of self-consistency among the basic experimental data obtained with both hydrostatic and uniaxial pressure.

In units of 1012 dyn/cm2 and for 25°C, the third-order moduli are: ModulusValue for SiValue for GeC111−8.25±0.10−7.10±0.06C112−4.51±0.05−3.89±0.03C123−0.64±0.10−0.18±0.06C144+0.12±0.25−0.23±0.16C166−3.10±0.10−2.92±0.08C456−0.64±0.20−0.53±0.07Thermodynamic definitions for the moduli (K. Brugger, Phys. Rev. 133, A1611 (1964)] have been used.

Từ khóa


Tài liệu tham khảo

1960, Z. Naturforsch., 15a, 1056

1961, J. Appl. Phys., 32, 928, 10.1063/1.1736135

1963, J. Appl. Phys., 34, 651, 10.1063/1.1729323

1964, J. Appl. Phys., 35, 2161, 10.1063/1.1702809

1964, Phys. Rev., 133, A1611, 10.1103/PhysRev.133.A1611

1964, Phys. Rev., 133, A1604, 10.1103/PhysRev.133.A1604

1964, J. Acoust. Soc. Am., 36, 644, 10.1121/1.1919031

1961, J. Acoust. Soc. Am., 33, 12, 10.1121/1.1908386

1962, J. Acoust. Soc. Am., 34, 609, 10.1121/1.1918175

Thông tin
Thông tin xuất bản

Journal of Applied Physics

Tập 35 Số 11

3312-3319

Thông tin tác giả