Management of process of plasma etching of silicon
Proceedings 6th Russian-Korean International Symposium on Science and Technology. KORUS-2002 (Cat. No.02EX565) - Trang 389-392
Tóm tắt
The research of process of plasma etching of silicon in CF/sub 2/Cl/sub 2//O/sub 2/ plasma on the installation "Plasma-600" is carried out. The covering of quartz walls of the reactor by fluorine polymer results in increase of speed of etching. The increase, observed in experiment, of concentration of chemically active particles (CAP) testifies to decrease by 10 times the probability of destruction of CAP as a result of one collision with a surface of the reactor covered by fluorine polymer. The preliminary results of development and research of the characteristics of the gauge of the moment of the ending of etching of silicon are submitted.
Từ khóa
#Plasma applications #Etching #Silicon #Plasma chemistry #Inductors #Polymers #Plasma materials processing #Spectroscopy #Plasma properties #Plasma diagnosticsTài liệu tham khảo
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