Magnetic nanostructures produced by electron beam patterning of direct write transition metal fluoride resists

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films - Tập 16 Số 3 - Trang 1374-1379 - 1998
Dmitry Streblechenko1, M. R. Scheinfein1
1Department of Physics and Astronomy, PSF-470 Box 871504, Arizona State University, Tempe, Arizona 85287-1504

Tóm tắt

Transition metal (TM) fluoride electron beam sensitive resists suitable for the in situ fabrication of arbitrarily shaped nanometer scale magnetic structures have been developed. 20 nm thick TM fluoride films are prepared by thermal evaporation onto thin carbon films. Nanopatterns are written directly into the TM fluoride film in a scanning transmission electron microscope using a 0.5 nm diameter electron probe. Electron energy loss spectroscopy measurements indicate that as fluorine is released, the TM coalesces. Electron micrographs of exposed patterns show that the resist resolution is on the order of nanometers. Exposure of broad areas leads to coalescent TM layers which cap the remaining fluoride and decrease the rate of fluorine removal. The cross section for the removal of a fluorine atom and the cross section for the same process in the presence of an arbitrarily thick capping layer were measured. An electron dose of 1000 C/cm2 at 100 keV will remove 90% of the fluorine from a 20 nm thick CoF2 film.

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Tài liệu tham khảo

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Thông tin xuất bản

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Tập 16 Số 3

1374-1379

Thông tin tác giả