Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal

Semiconductors - Tập 52 - Trang 1047-1050 - 2018
V. N. Jafarova1, G. S. Orudzhev1,2, S. S. Huseynova1, V. R. Stempitsky3, M. S. Baranava3
1Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan
2Azerbaijan Technical University, Baku, Azerbaijan
3Belarusian State University of Informatics and Radio Electronics, Minsk, Belarus

Tóm tắt

The electronic and magnetic properties of ZnO containing Cr doped atoms and Zn and O vacancies in its crystal structure are theoretically investigated. Calculations are performed using Atomistix Tool Kit and Vienna Ab-initio Simulation Package software implementing the electron density functional theory method with the Hubbard correction. It is shown that the magnetic moment of a defect supercell strongly depends on the impurity concentration and presence of vacancies. The doping of an oxygen atom increases the probability of zinc-vacancy formation.

Tài liệu tham khảo

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