MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation
Tóm tắt
Hot electron transport in MOS transistors is investigated by means of a coupled silicon/oxide Monte Carlo (MC) simulation. First, a new MC simulator able to handle selfconsistently different materials is developed. Then, the impact of oxide transport on the gate current (I/sub G/) is analyzed comparing different injection models with experiments. It is shown that oxide transport plays an important role on I/sub G/ when the gate voltage is below the drain voltage (V/sub GS/
Từ khóa
#MOSFET circuits #Hot carriers #Silicon #Monte Carlo methods #Integrated circuit modeling #Scattering #Potential well #Voltage #Electron emission #Computational modelingTài liệu tham khảo
10.1063/1.1461431
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