Low drift air-gap CMOS-FET gas sensor

SENSORS, 2002 IEEE - Tập 1 - Trang 421-425 vol.1
R. Paris1, S. Pawel1, R. Herzer1, T. Doll1, P. Kornetzky1, R.P. Gupta2, G. Eranna2
1Institute of Solid State Electronics, Technische Universität Ilmenau, Ilmenau, Germany
2CEERI, Pilani, India

Tóm tắt

We developed a low drift CMOS GasFET for a wide variety of gases like H/sub 2/, NH/sub 3/ or NO/sub 2/ combining the advantages of previous CCFET and SGFET concepts. The design comprises an insulated floating electrode structure for hybrid-mounted sensitive gates. The transducer has a low long term drift and temperature coefficient, comparable to a MOSFET, as measurements under real conditions prove.

Từ khóa

#Air gaps #Gas detectors #Electrodes #FETs #Temperature sensors #Capacitors #Insulation #Transducers #MOSFET circuits #Stability

Tài liệu tham khảo

gergintschew, 1994, ITG Fachbericht 126, 483 doll, 1995, Aufbau und Einsatz von hybriden Suspended Gate Feldeffekt-Transistoren (HSGFET), thesis 10.1016/0925-4005(93)01128-Q 10.1016/0925-4005(94)87008-X doll, 1998, Work Function Gas Sensors - Reference Layers and Signal Analysis, Proc of Eurosensors XII aslam-siddiqi, 0, Charakterisierung und Anwendung von analogen EEPROMs, Fortschritt-Berichte VDI witters, 1989, Chracteristics and reliability of thin oxid floating gate memory transistors and there supporting programming circuits janata, 0 gergintschew, 1996, Zweidimensionale Simulation, Entwicklung und Optimierung von Gassensoren auf der Basis von Feldeffekttransistoren, thesis 10.1063/1.88053