Losing of the chemically active particles in plasma CF/sub 2/Cl/sub 2//O/sub 2/
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 2 pp. - 2002
Tóm tắt
The research of the process of plasma etching of silicon in plasma CF/sub 2/Cl/sub 2/>/O/sub 2/ is carried out with the equipment of "Plasma-600". The covering of quartz walls of the reactor with fluorine polymer results in increasing the speed of etching. The increasing of the concentration of chemically active particles (CAP) observed in experiment, testifies to decreasing the probability of destruction of CAP 10 times less as a result of one collision with the surface of the reactor covered with the fluorine polymer.
Từ khóa
#Chemicals #Plasma chemistry #Plasma applications #Inductors #Etching #Polymers #Silicon #Plasma temperature #Testing #EquationsTài liệu tham khảo
kircev, 1995, Problem of the Choise Constructional Materials for Plasma Reactor, Abstracts of the Advanced Materials and Processes Third Russian-Chinese Symposium, 78
bogomolov, 2001, Silicon etching in CF2Cl2/O2 plasma, Abstracts 5th Korea-Russia International Symposium on Science and Technology, 146
danilin, 1987, Application of Low Temperature of Plasma for Etching and Clearing of Materials, 264