Local VOC Measurements by Kelvin Probe Force Microscopy Applied on P-I-N Radial Junction Si Nanowires

Nanoscale Research Letters - Tập 14 - Trang 1-8 - 2019
Clément Marchat1,2, Letian Dai2,3,4, José Alvarez1,2, Sylvain Le Gall2, Jean-Paul Kleider1,2, Soumyadeep Misra3, Pere Roca i Cabarrocas3
1Institut Photovoltaïque d’Ile-de-France (IPVF), Palaiseau, France
2Génie électrique et électronique de Paris (GeePs), UMR CNRS 8507, CentraleSupélec, Univ. Paris-Sud, Université Paris-Saclay, Sorbonne Universités, UPMC Univ Paris 06, Gif-sur-Yvette, France
3Laboratoire de Physique et Interfaces et des Couches Minces (LPICM), UMR CNRS 7647, CNRS, Ecole Polytechnique, Université Paris-Saclay, Palaiseau, France
4Laboratoire de Physique de la Matière Condensée (LPMC), UMR CNRS 7643, École Polytechnique, Palaiseau, France

Tóm tắt

This work focuses on the extraction of the open circuit voltage (VOC) on photovoltaic nanowires by surface photovoltage (SPV) based on Kelvin probe force microscopy (KPFM) measurements. In a first approach, P-I-N radial junction (RJ) silicon nanowire (SiNW) devices were investigated under illumination by KPFM and current-voltage (I-V) analysis. Within 5%, the extracted SPV correlates well with the VOC. In a second approach, local SPV measurements were applied on single isolated radial junction SiNWs pointing out shadowing effects from the AFM tip that can strongly impact the SPV assessment. Several strategies in terms of AFM tip shape and illumination orientation have been put in place to minimize this effect. Local SPV measurements on isolated radial junction SiNWs increase logarithmically with the illumination power and demonstrate a linear behavior with the VOC. The results show notably that contactless measurements of the VOC become feasible at the scale of single photovoltaic SiNW devices.

Tài liệu tham khảo

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