Issues in developing ohmic contacts to GaN
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 292-299
Tóm tắt
Approaches to achieve low resistivity ohmic contacts to GaN with planar and abrupt interfaces are discussed. Three types of thermally stable metallizations were studied: Ti/TiN for n-GaN, Ni/Si for p- and n-GaN, and ZrN/ZrB/sub 2/ for p-GaN. Although all these systems enable formation of ohmic contacts, it is suggested that the underlying mechanism, as investigated by a number of analytical methods, is different in each case.
Từ khóa
#Ohmic contacts #Gallium nitride #Conductivity #Electrons #Metallization #Optical microscopy #Gold #Semiconductor device doping #Temperature #HydrogenTài liệu tham khảo
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