Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's

IEEE Electron Device Letters - Tập 16 Số 8 - Trang 351-353 - 1995
J.A. Babcock1, John D. Cressler1, L.S. Vempati1, S.D. Clark2, R.C. Jaeger1, D.L. Harame3
1Alabama Microelectronics Science and Technology Center, Department of Electrical Engineering, Aubum University, Auburn, AL, USA
2Naval Surface Warfare Center, Crane, IN (USA)
3IBM Microelectronics Division, Hopewell Junction, NY, USA

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