Ion-implanted InP for ultrafast photodetector applications
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 153-156
Tóm tắt
In order to create highly resistive InP with short carrier lifetimes, p-type epilayers at 200/spl deg/C were implanted with MeV P/sup +/ ions up to doses of 1 /spl times/ 10/sup 16/ cm/sup -2/. Samples were subsequently annealed at temperatures between 400/spl deg/C and 700/spl deg/C for 30s. Double crystal x-ray diffraction, time resolved photoluminescence and Hall effect measurements were performed on these samples. The results of these experiments were then compared with the ones obtained from implantation into semi-insulating InP with a view to create materials suitable for ultrafast photodetector fabrication.
Từ khóa
#Indium phosphide #Photodetectors #Charge carrier lifetime #Annealing #Temperature #X-ray diffraction #Photoluminescence #Hall effect #Time measurement #Performance evaluationTài liệu tham khảo
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