Intelligent SOI CMOS integrated circuits and sensors for heterogeneous environments and applications
SENSORS, 2002 IEEE - Tập 2 - Trang 1407-1412 vol.2
Tóm tắt
In this paper, we demonstrate how a simple fully-depleted SOI CMOS process can be adapted to provide a wide range of performance compatible with the realization of heterogeneous micropower, high-temperature or RF micro-systems which involve the integration of sensing, analog and digital components. High-temperature and low-voltage examples are discussed.
Từ khóa
#Intelligent sensors #CMOS integrated circuits #CMOS process #MOSFETs #Radio frequency #Threshold voltage #CMOS technology #Silicon on insulator technology #Temperature sensors #Magnetic separationTài liệu tham khảo
10.1016/S0038-1101(01)00084-3
10.1016/S0921-5107(96)01921-6
10.1109/ICSENS.2002.1037325
picun, 2001, Characterization of thin-film SOI split-drain MOS transistors as magnetic sensors, Electrochemical Society Proc, 2001?3, 289
10.1109/ETFA.2001.997770
1997, Synthetic microwave inductors in SOI technology, IEEE Int SOI Conf Fish Camp, 90
10.1109/16.644646
10.1109/ISCAS.2002.1010670
10.1109/ISSSE.1998.738053
10.1149/1.1837833
dessard, 2001, Ultra-Low Power High-Temperature Voltage Reference Using Standard SOI CMOS Process, Proc HITEN conf
10.1109/41.915405
flandre, 1998, Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits, High-Temperature Electronics, 303
estrada, 2002, FD MOS SOI circuit to improve the threshold of detection of a co-integrated amorphous photodiode, lberchip workshop
brosius, 1996, SOI devices for high temperature applications, 3rd Int High Temperature Electronics Conf, 3
10.1109/SOIC.2001.958022
10.1023/A:1008321919587