Influence of radiation on current-voltage characteristics of CaF/sub 2//Si heterostructures
Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Tập 1 - Trang 2 pp. - 2002
Tóm tắt
Structures Al/CaF/sub 2//Si has been grown by method of the molecular-beam epitaxy (MBE) with thickness of film CaF/sub 2/ from 0.1 up to 0.5 /spl mu/m. Current-voltage characteristic (CVC) of Al/CaF/sub 2//Si structures before and after influence of radiation has been presented. It has been shown that the radiation has increased a current, but has not changed the mechanism of conductivity.
Từ khóa
#Voltage #Molecular beam epitaxial growth #Dielectrics #Silicon #Electrical resistance measurement #Lattices #Temperature #Current measurement #Conductivity #CalciumTài liệu tham khảo
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