Influence of anomalous dispersion mirror properties on quantum efficiency of InGaAs/GaAs resonant cavity photodetector
Tóm tắt
We present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs p-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror, flat-topped QE spectrum has been obtained. Conditions for ideal flat-topped spectral response have been received. A design with a maximum QE of 93.5% and 3-nm bandwidth at 0.02 dB below the peak is presented.
Tài liệu tham khảo
Y. Zhou, J. Cheng, and A.A. Allerman, “High-speed wavelength-division multiplexing and demultiplexing using monolithic quasi-planar VCSEL and resonant photodetector arrays with strained InGaAs quantum wells”, IEEE Photonic. Tech. L. 12, 122–124 (2000).
M.S. Unlu and S. Strite, “Resonant cavity enhanced photonic devices”, J. Appl. Phys. 78, 607–639 (1995).
K. Liu, Y. Huang, and X. Ren, “Theory and experiments of a three-cavity wavelength-selective photodetector”, Appl. Optics 39, 4263–4269 (2000).
I.S. Chung and Y.T. Lee, “A method to tune the cavity-mode wavelength of resonant cavity-enhanced photodetectors for bidirectional optical interconnects”, IEEE Photonic. Tech. L. 18, 46–48 (2006).
C.H. Chen, K. Tetz, and Y. Fainman, “Resonant-cavity-enhanced p-i-n photodiode with a broad quantum-efficiency spectrum by use of an anomalous-dispersion mirror”, Appl. Optics 44, 6131–6140 (2005).
M. Bass, Handbook of Optics: Vol. 1 Fundamentals, Techniques, and Design, 2nd edition, McGraw-Hill, New York, 1995.
Y. Zhou, J. Cheng, and A.A. Allerman, “High-speed wavelength-division multiplexing and demultiplexing using monolithic quasi-planar VCSEL and resonant photodetector arrays with strained InGaAs quantum wells”, IEEE Photonic. Tech. L. 12, 122–124 (2000).
S.V. Gryshchenko, A.A. Dyomin, and V.V. Lysak, “Theoretical study of the quantum efficiency of InGaAs/GaAs resonant cavity enhanced photodetectors”, Proc. Int. Workshop on Optoelectronic Physics and Technology, Kharkov, 20–22 (2007).
S.V. Gryshchenko, A.A. Demin, and V.V. Lysak, “Quantum efficiency and reflection in resonant cavity photodetector with anomalous dispersion mirror”, 4th Int. Conf. on Advanced Optoelectronics and Lasers, Alushta, Crimea, 2008.
S.V. Gryshchenko, A.A. Dyomin, V.V. Lysak, and I.A. Sukhoivanov, “Optical absorption and quantum efficiency in the resonant-cavity detector with anomalous dispersion layer”, 8th Int. Conf. on Numerical Simulation of Optoelectronic Devices, University of Nottingham, 2008.
S. Adachi, Physical Properties of III–V Semiconductor Compounds InP, InAs, GaAs, GaP, InGaAs, and InGaAsP, John Wiley & Sons, Inc., 1992.