Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers

С. И. Степанов1, W. N. Wang1, B. Yavich1, V. E. Bougrov2, Yu. T. Rebane3, Yu. G. Shreter2
1University of Bath, UK
2Ioffe Physical-Technical Institute, Russia
3Ioffe Physical Technical Institute, Russia

Tóm tắt

The composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of “scatter” in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the same results as compared to experimental uncertainty.

Từ khóa


Tài liệu tham khảo

10.1557/S1092578300001034

10.1143/JJAP.36.L177

10.1016/S0022-0248(98)00639-3

10.1063/1.125822

10.1063/1.121368

Yamaguchi, 1997, J. Phys. C, 9, 241

10.1063/1.122346

Wagner, 1999, MRS Internet J. Nitride Semicond. Res., 4S1, G2

10.1063/1.370980

10.1016/S0022-0248(98)00146-8

10.1063/1.122272

10.1063/1.366114

10.1063/1.370635

10.1063/1.121072

10.1016/S0038-1098(96)00722-3

10.1103/PhysRevB.53.16310

10.1063/1.122255

10.1143/JJAP.31.L1454

10.1002/1521-396X(200007)180:1<121::AID-PSSA121>3.0.CO;2-M