Influence of Nucleation Layers on MOVPE Growth of Semipolar ( $$11{\bar{2}}2$$ ) GaN on m-Plane Sapphire
Tóm tắt
The influence of the underlying nucleation layer on the properties of semipolar
$$(11{\bar{2}}2)$$
GaN grown on m-plane sapphire by metalorganic vapor-phase epitaxy has been investigated.
$$(11{\bar{2}}2)$$
GaN epilayers of ~ 1 μm thickness were grown using four different initiating sequences: low-temperature AlN and GaN, and high-temperature AlN buffer layers, and directly (high-temperature GaN). The choice of nucleation layer had a pronounced effect on the surface morphology and crystal quality of the overlying GaN epilayer. In comparison, direct growth of
$$(11{\bar{2}}2)$$
GaN without any buffer layer provided the best crystal quality with a rocking-curve
$$\omega $$
full-width at half-maximum (FWHM) value of 720 arcsec along the
$$[11{\bar{2}}{\bar{3}}]$$
direction and relatively enhanced near-band-edge photoluminescence emission, thus showing this direct growth process to be a simple route for synthesis of semipolar
$$(11{\bar{2}}2)$$
GaN layers.
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